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DMN3150LW
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
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Low On-Resistance:
R DS(ON) < 88m ? @ V GS = 4.5V
R DS(ON) < 138m ? @ V GS = 2.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
Drain
SOT-323
D
Gate
Source
G
S
Maximum Ratings
TOP VIEW
@T A = 25°C unless otherwise specified
EQUIVALENT CIRCUIT
Pin Configuration
Drain Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
28
± 12
Unit
V
V
Drain Current (Note 1)
Drain Current (Note 1)
Body-Diode Continuous Current (Note 1)
T A = 25°C
T A = 70°C
Pulsed
I D
I DM
I S
1.6
1.2
6.4
1.5
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 1)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
350
357
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV DSS
I DSS
I GSS
28
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800
± 80
± 800
V
nA
nA
V GS = 0V, I D = 250 μ A
V DS = 28V, V GS = 0V
V GS = ±12V, V DS = 0V
V GS = ±19V, V DS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
V GS(th)
R DS(ON)
|Y fs |
V SD
0.62
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0.94
73
115
5.4
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1.4
88
138
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1.16
V
m Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = 4.5V, I D = 1.6A
V GS = 2.5V, I D = 1.2A
V DS = 5V, I D = 2.7A
V GS = 0V, I S = 1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
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305
74
48
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pF
pF
pF
V DS = 5V, V GS = 0V
f = 1.0MHz
Notes:
1.
2.
3.
4.
Device mounted on 1in 2 FR-4 PCB on 2oz. Copper. t ≤ 10 sec.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
DMN3150LW
Document number: DS31514 Rev. 1 - 2
1 of 4
www.diodes.com
August 2008
? Diodes Incorporated
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